2SK3158 PDF Datasheet

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Description

This is Silicon N Channel MOS FET High Speed Power Switching. 2SK3158 Silicon N Channel MOS FET High Speed Power Switching ADE-208-757A(Z) Target Specification 2nd. Edition December 1998 Features Low on-resistance R DS =35mΩ typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 150 ±20 30 120 30 30 67 100 150 55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 150 ±20 1.0 18 Typ 35 42 30 2600 820 350 25 180 600 280 0.95 110 Ma.