2SK3157 PDF Datasheet

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Description

This is Silicon N Channel MOS FET High Speed Power Switching. 2SK3157 Silicon N Channel MOS FET High Speed Power Switching ADE-208-769A (Z) 2nd. Edition Februaty 1999 Features Low on-resistance R DS = 50 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3157 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 150 ±20 20 80 20 20 30 35 150 55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 150 ±20 1.0 13 Typ 50 60 22 1750 600 300 18 125 400 190 0.9 170 Max ±10 10 2.5 70 80 .