2SK3152 PDF Datasheet
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Description
This is Silicon N Channel MOS FET High Speed Power Switching. 2SK3152
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-732 (Z) 1st. Edition February 1999 Features
Low on-resistance R DS = 100 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
TO 220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
3
2SK3152
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 120 ±20 10 40 10 10 8.5 25 150 55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 120 ±20 1.0 5.5 Typ 100 130 9.5 580 240 130 11 55 140 80 0.9 100 Max ±10 10 2.5 130 170 .