2SK3151 PDF Datasheet

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Description

This is Silicon N Channel MOS FET High Speed Power Switching. 2SK3151 Silicon N Channel MOS FET High Speed Power Switching ADE-208-747A (Z) 2nd. Edition February 1999 Features Low on-resistance R DS (on) = 11.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO 3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3151 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 50 200 50 50 250 125 150 55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 ±20 1.0 30 Typ 11.5 16 50 4000 1650 590 30 280 830 450 0.95 100 .