2SK3142 PDF Datasheet
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Description
This is Silicon N Channel MOS FET High Speed Power Switching. 2SK3142
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-681A (Z) 2nd. Edition February 1999 Features
Low on-resistance R DS(on) = 4 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source
Outline
TO 220CFM
D
G 1 2 3
1. Gate 2. Drain 3. Source
S
2SK3142
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note 3 Note 3 Note 2 Note 1
Ratings 30 ±20 60 240 60 35 122 35 150 55 to +150
Unit V V A A A A mJ W °C °C
EAR Pch Tch
Tstg
1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK3142
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 30 1.0 |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 45 Typ .