2SK30A PDF Datasheet
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Description
This is Silicon N-Cahannel FET. Silicon Junction FETs
XIAOSHENG
Symbol:
Drain
LH03 Series of Products interconvert:
2SK30A
Gate
Source
Silicon N-Chinnel Junction FET
Application:
For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC ，electronic switch.
Package example:
Absolute Maximum Ratings (Ta=25℃)
Parameter Gate to Drain voltage Gate to Source voltage Gate current Allowable power dissipation Junction Temperature Storage Temperature Symbol VGDO VGSO IG PD Tj Tstg Ratings -50 -50 10 250 125 -55 to +125 Unit V V mA mW ℃ ℃ * Package
SC-59 SOT-23 TO-92S TO-92 TO-18
D
S
G
3
1
2
Electrical Characteristics (Ta=25℃) Prameter Symbol Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittamce
Input capacitance (Common Source) Reverse transfer capacitance (Common Source)
Conditions VDS = 10V, VGS = 0V VGS= -30V, VDS = 0V IG = -100μA，VDS = 0V VDS = 10V, ID = 0.1μA .