2SK2980 PDF Datasheet

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Description

This is Silicon N Channel MOS FET High Speed Power Switching. 2SK2980 Silicon N Channel MOS FET High Speed Power Switching ADE-208-571B (Z) 3rd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 500 mA) 2.5V gate drive devices. Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2980 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS Ratings 30 +12 10 Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: ID I D(pulse) Pch Tch Tstg Note1 Note2 Unit V V V A A W °C °C 1.0 4 0.8 150 55 to +150 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm) 2 2SK2980 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current I DSS I GSS Symbol V(BR)DSS V(BR)GSS Min 30 +12 10 0.5 Typ 0.2 Max 1.0 ±5.0 1.5 0.2.