2SK2978 PDF Datasheet
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Description
This is Silicon N Channel MOS FET High Speed Power Switching. 2SK2978
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-659B (Z) 3rd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.09 Ω typ. (V GS = 4 V, ID = 1.5 A) Low drive current High speed switching 2.5V gate drive devices.
Outline
UPAK
3
D
2
1
4
G
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2978
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings 20 ±10 2.5 5 2.5
Unit V V A A A W °C °C
Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg
Note2
1 150 55 to +150
1. PW ≤ 10 s, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 20 ±10 0.5 3.0 Typ 0.09 0.12 5.0 260 150 75 15 70 55 70 0.9 75 Max 10 ±10 1.5 0.12 0.20 Unit V V A A V Ω .