2SK2975 PDF Datasheet
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Description
This is RF POWER MOS FET(VHF/UHF power amplifiers). MITSUBISHI RF POWER MOS FET
2SK2975
DESCRIPTION
2SK2975 is a MOS FET type transistor specifically designed for VHF, UHF power amplifiers applications.
OUTLINE DRAWING
INDEX MARK (TOP)
Dimensions in mm
(BOTTOM)
FEATURES
High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm High efficiency:55% typ. Source case type seramic package (connected internally to source)
3
4.9
1
2
2.0 3.50 t=1.2MAX
APPLICATION
For drive stage and output stage of power amplifiers in VHF, UHF band portable radio sets.
1 : DRAIN 2 : SOURCE 3 : GATE
MARKING
INDEX MARK TYPE No. LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
Symbol VDSS VGSS Pch Tj Tstg Parameter Drain to source voltage Gate to source voltage Channel dissipation Junction temperature Storage temperature Conditions Ratings 30 ±20 10 175 -40 to +110 Unit V V W ˚C ˚C
Tc=25˚C
(Note2)
Note1: Above parameters are guaranteed independently. 2: Solder source pad on Copper Block(14×2.8×2mm)
ELECTRICAL CHARACTERISTICS.