2SK2973 PDF Datasheet
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Description
This is RF POWER MOS FET(VHF/UHF power amplifiers). MITSUBISHI RF POWER MOS FET
2SK2973
DESCRIPTION
2SK2973 is a MOS FET type transistor specifically designed for VHF, UHF power amplifiers applications.
OUTLINE DRAWING
4.6MAX 1.6±0.2
Dimensions in mm 1.5±0.1
FEATURES
High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm High efficiency:55% typ. Source case type SOT-89 package (connected internally to source)
1 2 3
APPLICATION
For drive stage and output stage of power amplifiers in VHF, UHF band portable radio sets.
1.5
0.53 MAX
0.48MAX 1 : DRAIN 2 : SOURCE 3 : GATE 0.4 +0.03 -0.05
3.0
MARKING
SOT-89
MARKING
TYPE No.
K1
LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
Symbol VDSS VGSS Pch Tj Tstg Parameter Drain to source voltage Gate to source voltage Channel dissipation Junction temperature Storage temperature Conditions Ratings 17 ±10 1.5 150 -40 to +110 Unit V V W ˚C ˚C
Tc=25˚C
(Note2)
Note1: Above parameters are guaranteed independently. 2: Solder on printed board(Copper leaf area;70×70mm,.