2SK2957 PDF Datasheet


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Description

This is Silicon N Channel MOS FET High Speed Power Switching. 2SK2957(L),2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th. Edition Jun 1998 Features Low on-resistance R DS(on) = 7mΩ typ. 4V gate drive devices. High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2957(L),2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 50 200 50 75 150 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ±20 1.0 25 Typ 7.0 12 45 2000 1500 350 20 330 190 190 0.95 60 Max 10 ±10 2.0 10 18 Unit V V A A V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 50A, VGS = 0 I.