2SK2933 PDF Datasheet

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Description

This is Silicon N Channel MOS FET High Speed Power Switching. 2SK2933 Silicon N Channel MOS FET High Speed Power Switching ADE-208-556B (Z) 3rd. Edition Jun 1998 Features Low on-resistance R DS(on) = 0.040Ω typ. 4V gate drive devices. High speed switching Outline TO 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 15 60 15 15 19 25 150 55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2 2SK2933 Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 1.5 7 Typ 0.040 0.060 11 500 260 110 10 80 100 110 0.9 50 Max 10 ±10 2.5 0.052 0.105 .