2SK2930 PDF Datasheet

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Description

This is Silicon N Channel MOS FET High Speed Power Switching. 2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th. Edition Jun 1998 Features Low on-resistance R DS =0.020 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 35 140 35 35 105 50 150 55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω 2 2SK2930 Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 1.5 14 Typ 0.020 0.032 23 1100 540 200 15 180 175 195 0.95 40 Max ±1.