2SK2662 PDF Datasheet
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Description
This is Silicon N Channel MOS Type Field Effect Transistor. 2SK2662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV)
2SK2662
DC DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
- Low drain source ON resistance
: RDS (ON) = 1.35 Ω (typ.)
- High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
- Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
- Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain source voltage
Drain gate voltage (RGS = 20 kΩ) Gate source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
500 500 ±30
5 20 35
180
5 3.5 150 55 to 150
V V V A A W
mJ
A mJ °C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy.