2SK2645-01MR PDF Datasheet
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Description
This is N-channel MOS-FET. 2SK2645-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
600V
1,2Ω
9A
50W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings T(
C=25°C), unless otherwise specified
> Equivalent Circuit
Rating 600 9 32 ±30 9 71,9 50 150 -55 ~ +150 Unit V A A V A mJ W °C °C
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range
Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg
- Electrical Characteristics (TC=25°C),
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward T.