2SK2611 PDF Datasheet
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Description
This is N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS). 2SK2611
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII)
2SK2611
DC DC Converter, Relay Drive and Motor Drive Applications
- Low drain source ON-resistance - High forward transfer admittance - Low leakage current - Enhancement mode : RDS (ON) = 1.2 Ω (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain source voltage Drain gate voltage (RGS = 20 kΩ) Gate source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 9 27 150 663 9 15 150 55 to 150
www.t.net,
Unit V V V A A W 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC
mJ A mJ °C °C
― SC-65 2-16C1B
JEITA TOSHIBA
Weight: 4.6 g (typ.)
No.