2SK2570 PDF Datasheet

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Description

This is Silicon N-Channel MOS FET Low Frequency Power Switching. 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features Low on-resistance R DS(on) = 0. 8 Ω typ. (VGS = 4 V, I D = 100 mA) 2.5V gate drive devices. Small package (MPAK) Outline MPAK 3 1 2 D G 1. Source 2. Gate 3. Drain S 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 s, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg 1 Ratings 20 ±10 0.2 0.4 150 150 55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 20 ±10 0.5 Typ 0.8 Max 1.0 ±5.0 1.5 1.1 Unit V V A A V Ω Ω S Test Conditions I D = 10 A, VGS = 0 I G = ±100 A, VDS = 0 VDS = 20 V, VGS = 0 VGS = ±6..