2SK2481 PDF Datasheet
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Description
This is SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE. DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2481
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2481 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
3.0 ± 0.3
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3 ± 0.2
FEATURES
Low On-Resistance
RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A)
6.0 MAX.
Low Ciss Ciss = 900 pF TYP. High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 s, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 900 ± 30 ± 4.0 ± 12 70 1.5 150 4.0 65.9 V V A A W W ˚C A mJ
4 1 2 3 1.3 ± 0.2 0.75 ± 0.1 2.54
0.5 ± 0.2 2.8 ± 0.2
2.54
1. Gate 2. Drain .