2SK2413 PDF Datasheet
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Description
This is SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE. DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2413
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2413 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS
(in millimeter)
FEATURES
Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
8.0 ±0.2
4.5 ±0.2
Low Ciss Ciss = 860 pF TYP. Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
13.0 ±0.2
1
2 3
2.5 ±0.2
1.4 ±0.2
1.4 ±0.2
0.5 ±0.1
0.5 ±0.1
0.5 ±0.1 1. Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Channel Temperature Storage Temper.