2SK2373 PDF Datasheet
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Description
This is Silicon N-Channel MOS FET. 2SK2373
Silicon N-Channel MOS FET
ADE-208-268 1st. Edition
Application
Low frequency power switching
Features
Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch
Outline
MPAK
3 1 2 D 1. Source 2. Gate 3. Drain
G
S
2SK2373
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 100 s, duty cycle ≤ 10 % 2. Marking is “ZE ”. Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 30 ±20 0.2 0.4 0.2 150 150 55 to +150
Unit V V A A A mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 30 ±20 1.0 Input capacitance Output capacitance Reverse transfer capacitance.