2SK2221 PDF Datasheet


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Description

This is Silicon N-Channel MOS FET. 2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. Value at Tc = 25 °C VGSS ID I DR Pch* Tch Tstg 1 Symbol VDSX Ratings 180 200 ±20 8 8 100 150 55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK2220 2SK2221 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol V(BR)DSX Min 180 200 ±20 0.15 0.7 Typ 1.0 .