2SK2114 PDF Datasheet


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Description

This is Silicon N-Channel MOS FET. 2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2114 2SK2115 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 450 500 ±30 5 20 5 35 150 55 to +150 Unit V V A A A W °C °C 2 2SK2114, 2SK2115 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK2114 2SK2115 V(BR)GSS I GSS I DSS Symbol V(BR)DSS Min 450 500 ±30 ±10 250 V A A I G = ±100 A, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 .