2SK2008 PDF Datasheet


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Description

This is Silicon N-Channel MOS FET. 2SK2008 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2008 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 20 80 20 60 150 55 to +150 Unit V V A A A W °C °C 2 2SK2008 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 ±30 2.0 9.0 Typ 0.12 14 2340 1000 160 30 125 190 100 1..