2SK1925 PDF Datasheet
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Description
This is N-Channel Silicon MOSFET. Ordering number:ENN4314
N-Channel Silicon MOSFET
2SK1925
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · High-speed diode (trr=150ns).
Package Dimensions
unit:mm
2056A
[2SK1925]
15.6 3.2 14.0
4.8 2.0
1.3 1.2 3.5 15.0 20.0
2.6
1.6 2.0
1.0 123 0.6
1.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Tc=25°C
Electrical Characteristics at Ta = 25˚C
5.45
Conditions
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
VDSS ID=10mA, VGS=0
Zero-Gate Votlage Drain Current
IDSS VDS=480V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=4A
Static Drain-to-Source On-State Resistance
RDS(on) ID=4A, VGS=1.