2SK1807 PDF Datasheet


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Description

This is Silicon N-Channel MOS FET. 2SK1807 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1807 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 4 10 4 60 150 55 to +150 Unit V V A A A W °C °C 2 2SK1807 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 900 ±30 2.0 1.7 Typ 3.0 2.7 740 305 150 15 60 100 80 0.9 800 Max .