2SK1775 PDF Datasheet
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Description
This is Silicon N-Channel MOS FET. 2SK1775
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-3PFM
D G
1
2
3
S
1. Gate 2. Drain 3. Source
2SK1775
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 900 ±30 8 20 8 60 150 55 to +150
Unit V V A A A W °C °C
2
2SK1775
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 900 ±30 2.0 3.5 Typ 1.2 5.5 1730 700 310 25 135 185 130 0.9 900 Max ±10 25.