2SK1724 PDF Datasheet
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Description
This is N-Channel Silicon MOSFET. Ordering number:EN3819
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
N-Channel Silicon MOSFET
2SK1724
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2062A
[2SK1724]
4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5 3.0
1
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10 s, duty cycle≤1% Tc=25°C Mounted on a ceramic board (250mm2×0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) | yfs |
RDS(on) RDS(on)
ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VD.