2SK1414 PDF Datasheet
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Description
This is N-Channel Silicon MOSFET. Ordering number:EN4230
N-Channel Silicon MOSFET
2SK1414
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance, low input capacitance, Ultrahigh-speed switching.
· High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2077A
[2SK1414]
20.0 3.3
5.0
26.0 6.0
2.0 1.0
20.7
2.0 3.4
1.2
1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
5.45
Conditions
PW≤10 s, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=1200V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=20V, ID=3A
Static Drain-to-Source ON-.