2SK1404 PDF Datasheet
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Description
This is Silicon N-Channel MOS FET. 2SK1404
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK1404
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 600 ±30 5 20 5 35 150 55 to +150
Unit V V A A A W °C °C
2
2SK1404
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 600 ±30 2.0 3.0 Typ 1.1 5.0 1000 250 45 12 45 105 55 0.9 500 Max ±10 25.