2SK1336 PDF Datasheet
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Description
This is Silicon N-Channel MOS FET. 2SK1336
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-92
D G
32
1 1. Source 2. Drain 3. Gate
S
2SK1336
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg
1
Ratings 60 ±20 0.3 1.2 0.3 400 150 55 to +150
Unit V V A A A mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 60 ±20 1.0 Forward transfer admittance Input capacitance Output capacitance Reverse.