2SK1169 PDF Datasheet


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Description

This is Silicon N-Channel MOS FET. 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1169 2SK1170 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 20 80 20 120 150 55 to +150 Unit V V A A A W °C °C 2 2SK1169, 2SK1170 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1169 V(BR)DSS 2SK1170 V(BR)GSS I GSS 450 500 ±30 ±10 250 V A A I G = ±100 A, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VG.