2SK1158 PDF Datasheet
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Description
This is Silicon N-Channel MOS FET. 2SK1157, 2SK1158
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1157, 2SK1158
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±30 7 28 7 60 150 55 to +150
Unit V
V A A A W °C °C
2
2SK1157, 2SK1158
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1157 V(BR)DSS 2SK1158 V(BR)GSS I GSS 450 500 ±30 ±10 250 V A A I G = ±100 A, VDS = 0 VGS = ±25 V, VDS = 0.