2SJ602 PDF Datasheet
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Description
This is MOS FIELD EFFECT TRANSISTOR. DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ602
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ602 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER 2SJ602 2SJ602-S 2SJ602-ZJ 2SJ602-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD
Note
FEATURES
Super low on-state resistance: RDS(on)1 = 73 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 107 mΩ MAX. (VGS = 4.0 V, ID = 10 A) Low input capacitance: Ciss = 1300 pF TYP. (VDS = 10 V, VGS = 0 V) Built-in gate protection diode
Note TO-220SMD package is produced only in Japan
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
60
V V A A W W °C °C A mJ (TO-262)
Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
m 20 m 20 m 50
40 1.5 150 55 to +150 20 40
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°.