2SJ580 PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is Ultrahigh-Speed Switching Applications. Ordering number : ENN6669
2SJ580
P-Channel Silicon MOSFET
2SJ580
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2062A
[2SJ580]
4.5 1.6 1.5
Low ON-resistanse. Ultrahigh-speed switching. 4V drive.
0.5
3
1.5
2
3.0
1
1.0
0.4
2.5 4.25max
0.4
0.75
1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10 s, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings
Unit -60 ± 20 --1.8 --7.2 1.5 3.5 150 V V A A W W °C °C
--55 to +150
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Sourse On-State Resistance Sy.