2SJ506 PDF Datasheet
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Description
This is Silicon P Channel MOS FET High Speed Power Switching. 2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-548 Target Specification 1st. Edition Features
Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = 10V, ID = 5A) Low drive current High speed switching 4V gate drive devices.
Outline
DPAK 2
4 D
4
1 2 G
3
1 2 S
3
1. Gate 2. Drain 3. Source 4. Drain
2SJ506(L), 2SJ506(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings 30 ±20 10 40 10 20 150 55 to +150
Unit V V A A A W °C °C
2
2SJ506(L), 2SJ506(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DS.