2SD649 PDF Datasheet
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Description
This is Silicon NPN Power Transistor. INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD649
DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability
APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
C
I
Collector Current- Continuous
w w
s c s i . w
1500 1500 5 3 5 35
V
V
n c . i m e
V
A
ICP
Collector Current-Pulse
A
PC
Collector Power Dissipation @ TC≤90℃
W
TJ
Junction Temperature
130
℃
Tstg
Storage Temperature Range
-65~130
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SD649
MAX
UNIT
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
5
V
VCE(sat)
Collector-Emit.