2SD5703 PDF Datasheet
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Description
This is Power Transistor.
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD5703
DESCRIPTION ·High Breakdown Voltage：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage
APPLICATIONS ·Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w
s c s i . w
VALUE UNIT 1500 V 800 V 6 V 10 A 30 A 70 W
n c . i m e
IC
Collector Current- Continuous
IC
Collector Current- Pulse Collector Power Dissipation @ TC=25℃
PC
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD5703
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 8A; IB= 1..