2SD467 PDF Datasheet
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Description
This is Silicon NPN Epitaxial. 2SD467
Silicon NPN Epitaxial
Application
Low frequency power amplifier Complementary pair with 2SB561
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SD467
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 0.7 1.0 0.5 150 55 to +150 Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5
1
Typ 0.19 0.76 280 12
Max 1.0 240 0.5 1.0
Unit V V V A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A (Pulse test)
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter satura.