2SD2120 PDF Datasheet


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Description

This is General Driver Applications. Ordering number:EN3239 NPN Epitaxial Planar Silicon Transistor 2SD2120 General Driver Applications Features · Darlington connection (Contains bias resistance, damper diode). · High DC current gain. · Less dependence of DC current gain on temperature. Package Dimensions unit:mm 2064A [2SD2120] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C 2.54 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Symbol Conditions ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V.