2SD1922 PDF Datasheet
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Description
This is Silicon NPN Epitaxial. 2SD1922
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-92MOD
2
3 ID
1. Emitter 2. Collector 3. Base
1
3 2 1
2SD1922
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode forward current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ic (peak) ID PC Tj Tstg Ratings 25 25 6 0.8 1.5 0.8 0.9 150 55 to +150 Unit V V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 25 6 250 Typ Max 35 35 0.2 0.5 0.2 1200 0.3 1.1 V V Unit V V V V A A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I C = 0.8 A, RBE = ∞, L = 20 mH I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A*1 I C = 0.8 A, IB = 80 mA*1 I D = 0.8 A*1
Collector to emitter br.