2SD1878 PDF Datasheet


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Description

This is SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION). 2SD1878 GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PML CONDITIONS VBE = 0V MIN VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.0A; IB = 1.2A f = 16KH- IF = 4.0A IC=4A,IB1=-IB2=1.2A,VCC=140V - MAX 1500 600 5 10 60 5 2.0 1.0 UNIT V V A A W V A V s LIMITING VALUES SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total pow.