2SD180 PDF Datasheet
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Description
This is Silicon NPN Power Transistor. INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD180
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 5A ·Good Linearity of hFE
APPLICATIONS ·Audio frequency power amplifier and low speed switching ·Suitable for output stages of 30 ~35 watts audio amplifier
and DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80 V
VCEO
Collector-Emitter Voltage
70 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
6A
ICM Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
TJ Junction Temperature
10 A 60 W 150 ℃
Tstg Storage Temperature
-65~＋150 ℃
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD180
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise spe.