2SD1418 PDF Datasheet
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Description
This is Silicon NPN Epitaxial. 2SD1418
Silicon NPN Epitaxial
Application
Low frequency power amplifier Complementary pair with 2SB1025
Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
2SD1418
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg
2 1
Ratings 120 80 5 1 2 1 150 55 to +150
Unit V V V A A W °C °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 80 5
1
Typ 140 12
Max 10 320 1 1.5
Unit V V V A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, IB = 50 m.