2SD1302 PDF Datasheet
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Description
This is Silicon NPN epitaxial planer type(For low-voltage output amplification). Transistor
2SD1302
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
5.0±0.2 4.0±0.2
s Features
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 25 20 12 1 0.5 600 150 55 ~ +150 Unit V V
2.3±0.2
0.45 0.1 1.27
+0.2
13.5±0.5
Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE.
5.1±0.2
0.45 0.1
1.27
+0.2
V A A mW ˚C ˚C
1 2 3
2.54±0.15
1:Emitter 2:Collector 3:Base JEDEC:TO 92 EIAJ:SC 43A
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter s.