2SD1101 PDF Datasheet
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Description
This is Silicon NPN Epitaxial. 2SD1101
Silicon NPN Epitaxial
Application
Low frequency amplifier Complementary pair with 2SB831
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SD1101
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 0.7 1 150 150 55 to +150 Unit V V V A A mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5
1
Typ
Max 1.0 240 0.5 1.0
Unit V V V A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A*2 I C = 0.5 A, IB = 0.05 A*2 VCE = 1 V, IC = 0.15 A*2
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to.