2SC898 PDF Datasheet
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Description
This is Silicon NPN Power Transistor. INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC898
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V (Min) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 6A
APPLICATIONS ·Designed for amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER MAX UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature
7
A
PC
80
W
Tj
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC898
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; IB= 0
150
V
VCE(sat)
Col.