2SC5609 PDF Datenblatt
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Beschreibung
This is Silicon PNP Epitaxial Transistor. Transistors
2SC5609
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SA2021 I Features
High foward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
0.33+0.05 0.02 3
0.10+0.05 0.02
(0.40) (0.40) 0.80±0.05 1.20±0.05 5˚
0.15 min.
0.23+0.05 0.02
1
2
I Absolute Maximum Ratings Ta = 25°C
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg 60 50 7 200 100 100 125 55 to +125 V V V mA mA mW °C °C
0 to 0.01
Parameter
Symbol
Rating
Unit
1: Base 2: Emitter 3: Collector SSS Mini Type Package (3-pin)
Marking Symbol: 3F
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emit.