2SC5180 PDF Datasheet
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Description
This is NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION. DATA SHEET
SILICON TRANSISTOR
2SC5180
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
2
Low current consumption and high gain
S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
PACKAGE DIMENSIONS
(Units : mm) 2.1 ± 0.2 1.25 ± 0.1
Supper Mini-Mold package
S21e 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
0.3 +0.1 0.05
2.0 ± 0.2
QUANTITY
ARRANGEMENT Embossed tape, 8 mm wide, pins No. 3 (base) and No. 4 (emitter) facing the perforations Embossed tape, 8 mm wide, pins No. 1 (collector) and No. 2 (emitter) facing the perforations
0.65
(1.25)
2SC5180 T1 3 000 units, reel 2SC5180 T2
0.60
0.4 +0.1 0.05
* Contact your NEC sales representatives to order samples for evaluation (available in batches of 50). 0.9 ± 0.1
0.3
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO IC PT Tj T.