2SC4793 PDF Datasheet
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Description
This is Silicon NPN Epitaxial Type TRANSISTOR. TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4793
Power Amplifier Applications Driver Stage Amplifier Applications
2SC4793
Unit: mm
High transition frequency: fT = 100 MH- (typ.) Complementary to 2SA1837
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VCBO VCEO VEBO
IC IB
PC
230 V 230 V
5V 1A 0.1 A 2.0
W 20
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEITA TOSHIBA
― 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high temperature, current, voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature, current, voltage, etc.) are within the absolute maximum ratings.
Plea.