2SC4520 PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is NPN Epitaxial Planar Silicon Transistors. Ordering number:EN3139
NPN Epitaxial Planar Silicon Transistors
2SC4520
High-Speed Switching Applications
Features
· Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package.
Package Dimensions
unit:mm 2038A
[2SC4520]
4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions Mounted on ceramic board (250mm2× 0.8mm)
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Ratings 60 45 5 1.5 3 1.3
150 55 to +150
Unit V V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Ban.